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ML925B11F

Mitsubishi Electric Corp.

ML925B11F Datasheet
Mitsubishi Electric Corp. ML925B11F
  • Shape
    ROUND
  • Size (mm)
    2
  • Configuration
    SINGLE WITH BUILT-IN PHOTO DIODE
  • Mounting Feature
    THROUGH HOLE MOUNT
  • Number of Functions
    1
  • Peak Wavelength (nm)
    1550
  • Output Power-Nom (mW)
    10
  • Response Time-Max (s)
    2.0E-10
  • Semiconductor Material
    InGaAsP
  • Forward Current-Max (A)
    0.08
  • Forward Voltage-Max (V)
    1.5
  • Optoelectronic Device Type
    LASER DIODE
  • Threshold Current-Max (mA)
    15
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -40

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ML925B11F
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ML925B11F