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ML774E8F

Mitsubishi Electric Corp.

Mitsubishi Electric Corp. ML774E8F
  • Shape
    ROUND
  • Size (mm)
    1.5
  • Configuration
    SINGLE WITH BUILT-IN PHOTO DIODE
  • Mounting Feature
    THROUGH HOLE MOUNT
  • Additional Feature
    HIGH RELIABILITY
  • Number of Functions
    1
  • Peak Wavelength (nm)
    1310
  • Output Power-Nom (mW)
    10
  • Semiconductor Material
    InGaAs
  • Forward Current-Max (A)
    0.002
  • Optoelectronic Device Type
    LASER DIODE
  • Threshold Current-Max (mA)
    20
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -40

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ML774E8F
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ML774E8F