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ML725B11F-05

Mitsubishi Electric Corp.

ML725B11F-05 Datasheet
Mitsubishi Electric Corp. ML725B11F-05
  • Mounting Feature
    THROUGH HOLE MOUNT
  • Peak Wavelength (nm)
    1300
  • Semiconductor Material
    InGaAsP
  • Forward Current-Max (A)
    0.04
  • Forward Voltage-Max (V)
    1.8
  • Optoelectronic Device Type
    LASER DIODE
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    0

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ML725B11F-05
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ML725B11F-05