MJD45H11-1
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- DescriptionPower Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- J-STD-609 Codee0
- VCEsat-Max (V)1
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypePNP
- DC Current Gain-Min (hFE)40
- Power Dissipation-Max (W)20
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)8
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)80
- Power Dissipation Ambient-Max (W)20
- Transition Frequency-Nom (fT) (MHz)40
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MJD45H11-1