MJD41CQ-13
Diodes Incorporated
- Lifecycle statusActive
- RoHSRoHS compliant
- Description100V NPN Medium Power Transistor In To252 Automotive AEC-Q101
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE
- JEDEC-95 CodeTO-252
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee3
- VCEsat-Max (V)1.5
- Case ConnectionCOLLECTOR
- Terminal FinishMATTE TIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)15
- Power Dissipation-Max (W)2.7
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)260
- Collector Current-Max (IC) (A)6
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Collector-emitter Voltage-Max (V)100
- Collector-base Capacitance-Max (pF)42
- Transition Frequency-Nom (fT) (MHz)3
- Screening Level / Reference StandardAEC-Q101; IATF 16949; MIL-STD-202
- Time@Peak Reflow Temperature-Max (s)30
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MJD41CQ-13