MJD122
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- DescriptionPower Bipolar Transistor, 8A I(C), NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationDARLINGTON
- Surface MountYES
- J-STD-609 Codee0
- Terminal FinishTin/Lead (Sn/Pb)
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)1000
- Power Dissipation-Max (W)20
- Collector Current-Max (IC) (A)8
- Operating Temperature-Max (Cel)150
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MJD122
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MJD122