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MJD112TF

FAIRCHILD SEMICONDUCTOR CORP

FAIRCHILD SEMICONDUCTOR CORP MJD112TF
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • JESD-30 Code
    R-PSSO-G2
  • Configuration
    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
  • JEDEC-95 Code
    TO-252
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • J-STD-609 Code
    e3
  • Terminal Finish
    Matte Tin (Sn)
  • DLA Qualification
    Not Qualified
  • Terminal Position
    SINGLE
  • Number of Elements
    1
  • Number of Terminals
    2
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    NPN
  • DC Current Gain-Min (hFE)
    200
  • Power Dissipation-Max (W)
    20
  • Moisture Sensitivity Level
    1
  • Transistor Element Material
    SILICON
  • Peak Reflow Temperature (Cel)
    260
  • Collector Current-Max (IC) (A)
    2
  • Operating Temperature-Max (Cel)
    150
  • Collector-emitter Voltage-Max (V)
    100
  • Transition Frequency-Nom (fT) (MHz)
    25
  • Time@Peak Reflow Temperature-Max (s)
    30

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MJD112TF
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MJD112TF