MJ10012 by NTE Electronics Inc. | Sourcengine

NTE Electronics Inc. MJ10012

Lifecycle status
Active
RoHS
RoHS compliant
Description
NPN Silicon Power Darlington Transistor
Category
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
O-MBFM-P2
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
JEDEC-95 Code
TO-3
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
VCEsat-Max (V)
2.5
Case Connection
COLLECTOR
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
2
Package Body Material
METAL
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
20
Power Dissipation-Max (W)
175
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
10
Operating Temperature-Max (Cel)
200
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
400
Collector-base Capacitance-Max (pF)
350
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED