MJ10003
ASI Semiconductor, Inc.
- Lifecycle statusActive-Unconfirmed
- DescriptionPower Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-MBFM-P2
- ConfigurationSINGLE
- JEDEC-95 CodeTO-3
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals2
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)30
- Collector Current-Max (IC)10 A
- Power Dissipation-Max (Abs)150 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max400 V
- Transition Frequency-Nom (fT)10 MHz
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MJ10003
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MJ10003