MIW50N65H-BP
Micro Commercial Components Corp.
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionIGBT
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max1.85 V
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-247
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)108 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)485 ns
- Operating Temperature-Max175 Cel
- Operating Temperature-Min-55 Cel
- Collector Current-Max (IC)50 A
- Power Dissipation-Max (Abs)250 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max6.5 V
- Collector-emitter Voltage-Max650 V
0 suppliers available to buy or to bid for MIW50N65H-BP
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
MIW50N65H-BP