MHPM7A10S120DC3
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 10A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PUFM-X24
- ConfigurationCOMPLEX
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Terminal PositionUPPER
- Additional FeatureFAST SOFT
- Number of Elements7
- Number of Terminals24
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)10 A
- Power Dissipation-Max (Abs)29 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1200 V
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MHPM7A10S120DC3