MHPM6B10N120SL
Motorola,Inc.
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PUFM-P17
- ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements6
- Reference StandardUL RECOGNIZED
- Number of Terminals17
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)253 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)731 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)15 A
- Power Dissipation-Max (Abs)41 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1200 V
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MHPM6B10N120SL