MGFX35V0005-51 by Mitsubishi Electric Corp. | Sourcengine

Mitsubishi Electric Corp. MGFX35V0005-51

Lifecycle status
Discontinued
Description
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET
Category
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-CDFM-F2
Configuration
SINGLE WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Power Gain-Min (Gp)
7.5 dB
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
2.8 A
Highest Frequency Band
X BAND
Transistor Application
AMPLIFIER
Operating Temperature-Max
175 Cel
Transistor Element Material
GALLIUM ARSENIDE