MGFS45B2527B
Mitsubishi Electric Corp.
- Lifecycle statusDiscontinued
- DescriptionRF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- JESD-30 CodeR-CDFM-F2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)10 A
- Highest Frequency BandS BAND
- Transistor ApplicationAMPLIFIER
- Operating Temperature-Max150 Cel
- Transistor Element MaterialGALLIUM ARSENIDE
- Power Dissipation Ambient-Max78 W
0 suppliers available to buy or to bid for MGFS45B2527B
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
MGFS45B2527B
Send an RFQ
MGFS45B2527B