MGFS37G38L2-01
Mitsubishi Electric Corp.
- Lifecycle statusActive
- DescriptionRF Power Field-Effect Transistor, 2-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-N6
- ConfigurationSEPARATE, 2 ELEMENTS
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandS BAND
- Power Gain-Min (Gp) (dB)17
- Transistor Element MaterialGALLIUM NITRIDE
- DS Breakdown Voltage-Min (V)50
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MGFS37G38L2-01