MGFC4453A-A02
Mitsubishi Electric Corp.
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.40
- SB Code8541.21.00.40
- JESD-30 CodeR-XUUC-N6
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Terminal PositionUPPER
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals6
- Power Gain-Min (Gp)12 dB
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.01 A
- Highest Frequency BandK BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min2 V
- Operating Temperature-Max125 Cel
- Transistor Element MaterialGALLIUM ARSENIDE
- Power Dissipation Ambient-Max0.05 W
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MGFC4453A-A02