MGFC39V5864
Mitsubishi Electric Corp.
- Lifecycle statusDiscontinued
- DescriptionRF Power Field-Effect Transistor, N-Channel, Metal Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- FET TechnologyMETAL SEMICONDUCTOR
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)7.5 A
- Operating Temperature-Max175 Cel
- Power Dissipation Ambient-Max42.8 W
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MGFC39V5864