MGFC2445-T03 by Mitsubishi Electric Corp. | Sourcengine

Mitsubishi Electric Corp. MGFC2445-T03

Lifecycle status
Discontinued
Description
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET
Category
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUUC-N3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
3
Power Gain-Min (Gp)
4.5 dB
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
1.4 A
Highest Frequency Band
KU BAND
Transistor Application
AMPLIFIER
Operating Temperature-Max
175 Cel
Transistor Element Material
GALLIUM ARSENIDE