MGFC1801-T01 by Mitsubishi Electric Corp. | Sourcengine

Mitsubishi Electric Corp. MGFC1801-T01

Lifecycle status
Discontinued
Description
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET
Category
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUUC-N10
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
10
Power Gain-Min (Gp)
7 dB
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.25 A
Highest Frequency Band
X BAND
Transistor Application
AMPLIFIER
Operating Temperature-Max
175 Cel
Transistor Element Material
GALLIUM ARSENIDE