MGF4934CM-75
Mitsubishi Electric Corp.
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- DescriptionRF Super Low Noise Ingaas High Electron Mobility Transistor
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-F4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandKU BAND
- Power Gain-Min (Gp) (dB)11.5
- Drain Current-Max (ID) (A)0.06
- Transistor Element MaterialINDIUM GALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)3
- Operating Temperature-Max (Cel)125
- Power Dissipation Ambient-Max (W)0.05
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MGF4934CM-75
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MGF4934CM-75