MGF4934CM
Mitsubishi Electric Corp.
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, KU Band, Indium Gallium Arsenide, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.95
- SB Code8541.21.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-F4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandKU BAND
- Power Gain-Min (Gp) (dB)11.5
- Drain Current-Max (ID) (A)0.06
- Transistor Element MaterialINDIUM GALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)3
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)125
- Power Dissipation Ambient-Max (W)0.05
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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MGF4934CM
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MGF4934CM