MGF0919A-03
Mitsubishi Electric Corp.
- Lifecycle statusDiscontinued
- DescriptionRF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- JESD-30 CodeR-PDSO-N2
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.8 A
- Highest Frequency BandS BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min10 V
- Operating Temperature-Max175 Cel
- Transistor Element MaterialGALLIUM ARSENIDE
- Power Dissipation Ambient-Max6 W
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MGF0919A-03
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MGF0919A-03