MDS1754RH by MAGNACHIP SEMICONDUCTOR LTD | Sourcengine

MAGNACHIP SEMICONDUCTOR LTD MDS1754RH

Lifecycle status
Active-Unconfirmed
RoHS
RoHS compliant
Description
Power Field-Effect Transistor, 7.6A I(D), 40V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Other Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PDSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
7.6 A
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
38 pF
DS Breakdown Voltage-Min
40 V
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Power Dissipation-Max (Abs)
2.5 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
18 mJ
Power Dissipation Ambient-Max
2.5 W
Drain-source On Resistance-Max
0.029 ohm
Pulsed Drain Current-Max (IDM)
50 A