MDD1901RH by MAGNACHIP SEMICONDUCTOR LTD | Sourcengine

MAGNACHIP SEMICONDUCTOR LTD MDD1901RH

Lifecycle status
Active
RoHS
RoHS compliant
Description
Power Field-Effect Transistor, 40A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-252
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
TRENCH MOSFET
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
70
Drain Current-Max (ID) (A)
40
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
57
DS Breakdown Voltage-Min (V)
100
Feedback Cap-Max (Crss) (pF)
160
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
117
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
200
Pulsed Drain Current-Max (IDM) (A)
80
Drain-source On Resistance-Max (ohm)
0.022
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED