MCG25P05YHE3-TP
Micro Commercial Components Corp.
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 25A I(D), 48V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeS-PDSO-N8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)74
- Drain Current-Max (ID) (A)25
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)48
- Feedback Cap-Max (Crss) (pF)22
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)81
- Pulsed Drain Current-Max (IDM) (A)100
- Drain-source On Resistance-Max (ohm)0.061
- Screening Level / Reference StandardAEC-Q101
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MCG25P05YHE3-TP