MBN600C33
Renesas Electronics Corp.
- Lifecycle statusContact Mfr
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 600A I(C), 3300V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Case ConnectionISOLATED
- Additional FeatureHIGH SPEED, ULTRA SOFT FAST RECOVERY
- Number of Elements1
- Qualification StatusNot Qualified
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)1200 ns
- Collector Current-Max (IC)600 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max3300 V
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MBN600C33
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MBN600C33