MBN600C20
Renesas Electronics Corp.
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 600A I(C), 2000V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max5.4 V
- JESD-30 CodeR-XUFM-X4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Additional FeatureHIGH RELIABILITY, HIGH SPEED, LOW NOISE
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)1600 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)4000 ns
- Operating Temperature-Max125 Cel
- Collector Current-Max (IC)600 A
- Power Dissipation-Max (Abs)4000 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max2000 V
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MBN600C20
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MBN600C20