MBN600C20 by Hitachi, Ltd. | Sourcengine

Hitachi, Ltd. MBN600C20

Lifecycle status
Transferred
Description
Insulated Gate Bipolar Transistor, 600A I(C), 2000V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
5.4
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
HIGH RELIABILITY, HIGH SPEED, LOW NOISE
Number of Elements
1
Number of Terminals
4
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
4000
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
1600
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
4000
Collector Current-Max (IC) (A)
600
Operating Temperature-Max (Cel)
125
Collector-emitter Voltage-Max (V)
2000