MBN400GR12
Hitachi, Ltd.
- Lifecycle statusTransferred
- DescriptionInsulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PUFM-X4
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- VCEsat-Max (V)2.8
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Power Dissipation-Max (W)2000
- Gate-emitter Voltage-Max (V)20
- Collector Current-Max (IC) (A)400
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)1200
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MBN400GR12