MBN2400E17D
Hitachi, Ltd.
- Lifecycle statusContact Mfr
- DescriptionInsulated Gate Bipolar Transistor, 2400A I(C), 1700V V(BR)CES
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2.9 V
- Number of Elements1
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max125 Cel
- Collector Current-Max (IC)2400 A
- Collector-emitter Voltage-Max1700 V
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MBN2400E17D
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MBN2400E17D