MBN1200GR12A
Renesas Electronics Corp.
- Lifecycle statusContact Mfr
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 1200A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeS-XUFM-X4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Additional FeatureHIGH RELIABILITY, LOW NOISE
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)800 ns
- Turn-off Time-Nom (toff)1400 ns
- Collector Current-Max (IC)1200 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1200 V
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MBN1200GR12A
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MBN1200GR12A