MBN1200F33F by Hitachi, Ltd. | Sourcengine

Hitachi, Ltd. MBN1200F33F

Lifecycle status
Contact Mfr
RoHS
RoHS compliant
Description
Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Number of Elements
2
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
1200 A
Collector-emitter Voltage-Max
3300 V