MBN1200E17D
Hitachi, Ltd.
- Lifecycle statusContact Mfr
- DescriptionInsulated Gate Bipolar Transistor, 1200A I(C), 1700V V(BR)CES
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max3.3 V
- Number of Elements1
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max125 Cel
- Collector Current-Max (IC)1200 A
- Collector-emitter Voltage-Max1700 V
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MBN1200E17D
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MBN1200E17D