MBM29LV004BC-12PTR
Cypress Semiconductor Corporation
- Lifecycle statusTransferred
- DescriptionFlash, 512KX8, 120ns, PDSO40
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.51
- SB Code8542.32.00.50
- TypeNOR TYPE
- Boot BlockBOTTOM
- Ready/BusyYES
- TechnologyCMOS
- Toggle BitYES
- Data PollingYES
- JESD-30 CodeR-PDSO-G40
- Memory Width8
- Package CodeTSSOP
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE, SHRINK PITCH Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee0
- Memory IC TypeFLASH
- Reverse PinoutYES
- Parallel/SerialPARALLEL
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Memory Organization512KX8
- Number of Terminals40
- Sector Size (words)16K,8K,32K,64K
- Terminal Pitch (mm)0.5
- Access Time-Max (ns)120
- Number of Words Code512K
- Memory Density (bits)4194304
- Package Body MaterialPLASTIC/EPOXY
- Command User InterfaceYES
- Number of Sectors/Size1,2,1,7
- Number of Words (words)524288
- Standby Current-Max (A)5.0E-6
- Supply Current-Max (mA)35
- Package Equivalence CodeTSSOP40,.8,20
- Moisture Sensitivity Level3
- Peak Reflow Temperature (Cel)260
- Endurance (Write/Erase Cycles)100000
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
0 suppliers available to buy or to bid for MBM29LV004BC-12PTR
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
MBM29LV004BC-12PTR