MBM200H45E2-H by Hitachi, Ltd. | Sourcengine

Hitachi, Ltd. MBM200H45E2-H

Lifecycle status
Contact Mfr
Description
Insulated Gate Bipolar Transistor, 200A I(C), 4500V V(BR)CES
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
4.5 V
Number of Elements
1
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
125 Cel
Collector Current-Max (IC)
200 A
Power Dissipation-Max (Abs)
1960 W
Collector-emitter Voltage-Max
4500 V