MBM200GR6
Renesas Electronics Corp.
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2.6 V
- JESD-30 CodeR-XUFM-X7
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Additional FeatureHIGH RELIABILITY, LOW NOISE
- Number of Elements2
- Number of Terminals7
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)300 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)550 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)200 A
- Power Dissipation-Max (Abs)690 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max600 V
0 suppliers available to buy or to bid for MBM200GR6
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
MBM200GR6
Send an RFQ
MBM200GR6