MBM200BS6
Hitachi, Ltd.
- Lifecycle statusTransferred
- DescriptionInsulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Additional FeatureHIGH SPEED, ULTRA SOFT FAST RECOVERY
- Number of Elements2
- Polarity/Channel TypeN-CHANNEL
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)400
- Collector Current-Max (IC) (A)200
- Collector-emitter Voltage-Max (V)600
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MBM200BS6