MBL800E33D
Hitachi, Ltd.
- Lifecycle statusContact Mfr
- DescriptionInsulated Gate Bipolar Transistor, 800A I(C), 3300V V(BR)CES
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max5.2 V
- Number of Elements1
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max125 Cel
- Collector Current-Max (IC)800 A
- Collector-emitter Voltage-Max3300 V
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MBL800E33D
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MBL800E33D