MBB100GS12A
Renesas Electronics Corp.
- Lifecycle statusContact Mfr
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
- Case ConnectionISOLATED
- Additional FeatureHIGH SPEED, ULTRA SOFT FAST RECOVERY
- Number of Elements6
- Qualification StatusNot Qualified
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)350 ns
- Collector Current-Max (IC)100 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1200 V
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MBB100GS12A
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MBB100GS12A