MBB100AS6 by Hitachi, Ltd. | Sourcengine

Hitachi, Ltd. MBB100AS6

Lifecycle status
Transferred
Description
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Additional Feature
HIGH SPEED, ULTRA SOFT FAST RECOVERY
Number of Elements
6
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
400
Collector Current-Max (IC) (A)
100
Collector-emitter Voltage-Max (V)
600