MB81164822A-100FN
Fujitsu Semiconductor America, Inc.
- Lifecycle statusDiscontinued
- DescriptionSynchronous DRAM, 8MX8, MOS, PDSO54
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width10.16 mm
- Length22.22 mm
- TechnologyMOS
- Access ModeDUAL BANK PAGE BURST
- JESD-30 CodeR-PDSO-G54
- Memory Width8
- Organization8MX8
- Package CodeTSOP2
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory Density67108864 bit
- Memory IC TypeSYNCHRONOUS DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Terminal Pitch0.8 mm
- Number of Ports1
- Number of Words8388608 words
- Seated Height-Max1.2 mm
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals54
- Number of Words Code8M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)3 V
- Supply Voltage-Nom (Vsup)3.3 V
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MB81164822A-100FN