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M55D1G3232A-EEBG2Y

ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC

M55D1G3232A-EEBG2Y Datasheet
ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGY INC M55D1G3232A-EEBG2Y
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.32
  • SB Code
    8542.32.00.15
  • I/O Type
    COMMON
  • Technology
    CMOS
  • Width (mm)
    11
  • Access Mode
    MULTI BANK PAGE BURST
  • Length (mm)
    11.5
  • JESD-30 Code
    R-PBGA-B178
  • Memory Width
    32
  • Package Code
    VFBGA
  • Self Refresh
    YES
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory IC Type
    LPDDR3 DRAM
  • Operating Mode
    SYNCHRONOUS
  • Refresh Cycles
    4096
  • Number of Ports
    1
  • Terminal Position
    BOTTOM
  • Memory Organization
    32MX32
  • Number of Functions
    1
  • Number of Terminals
    178
  • Terminal Pitch (mm)
    0.8
  • Number of Words Code
    32M
  • Memory Density (bits)
    1073741824
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Seated Height-Max (mm)
    1
  • Supply Voltage-Max (V)
    1.95
  • Supply Voltage-Min (V)
    1.7
  • Supply Voltage-Nom (V)
    1.8
  • Number of Words (words)
    33554432
  • Sequential Burst Length
    8
  • Standby Current-Max (A)
    5.0E-5
  • Supply Current-Max (mA)
    189
  • Interleaved Burst Length
    8
  • Package Equivalence Code
    BGA178,13X17,32/25
  • Clock Frequency-Max (MHz)
    933
  • Operating Temperature-Max (Cel)
    85
  • Operating Temperature-Min (Cel)
    -25

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