M471B5774EB0-CH9
Samsung Semiconductor, Inc.
- Lifecycle statusActive-Unconfirmed
- REACHREACH compliant
- DescriptionDDR3 DRAM Module, 256MX64, 20ns, CMOS, PDMA204
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)3.8
- Access ModeDUAL BANK PAGE BURST
- Length (mm)67.6
- JESD-30 CodeR-PDMA-N204
- Memory Width64
- Package CodeDIMM
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory IC TypeDDR3 DRAM MODULE
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Number of Ports1
- Terminal PositionDUAL
- Memory Organization256MX64
- Number of Functions1
- Number of Terminals204
- Terminal Pitch (mm)0.6
- Access Time-Max (ns)20
- Number of Words Code256M
- Memory Density (bits)17179869184
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)30.13
- Supply Voltage-Max (V)1.575
- Supply Voltage-Min (V)1.425
- Supply Voltage-Nom (V)1.5
- Number of Words (words)268435456
- Sequential Burst Length4,8
- Interleaved Burst Length4,8
- Package Equivalence CodeDIMM204,24
- Clock Frequency-Max (MHz)667
- Operating Temperature-Max (Cel)95
- Operating Temperature-Min (Cel)0
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M471B5774EB0-CH9