M471B5173CB0-YH9
Samsung Semiconductor, Inc.
- Lifecycle statusActive-Unconfirmed
- REACHREACH compliant
- DescriptionDDR DRAM Module, 512MX64, 0.255ns, CMOS
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- Width3.8 mm
- Length67.6 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeSINGLE BANK PAGE BURST
- JESD-30 CodeR-XDMA-N204
- Memory Width64
- Organization512MX64
- Package CodeDIMM
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density34359738368 bit
- Memory IC TypeDDR DRAM MODULE
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Terminal Pitch0.6 mm
- Access Time-Max0.255 ns
- Number of Ports1
- Number of Words536870912 words
- Seated Height-Max30.13 mm
- Temperature GradeOTHER
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH; WD-MAX; ALSO OPERATES AT 1.5V NOMINAL SUPPLY
- Supply Current-Max1040 mA
- Number of Functions1
- Number of Terminals204
- Standby Current-Max0.088 Amp
- Number of Words Code512M
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Output Characteristics3-STATE
- Package Equivalence CodeDIMM204,24
- Operating Temperature-Max85 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.45 V
- Supply Voltage-Min (Vsup)1.283 V
- Supply Voltage-Nom (Vsup)1.35 V
- Clock Frequency-Max (fCLK)667 MHz
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M471B5173CB0-YH9