M470L6524BN0-CB0
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionCache DRAM Module, 64MX64, 0.75ns, CMOS, PDMA200
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDMA-N200
- Memory Width64
- Organization64MX64
- Package CodeDIMM
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density4294967296 bit
- Memory IC TypeCACHE DRAM MODULE
- Refresh Cycles8192
- Terminal Pitch0.6 mm
- Access Time-Max0.75 ns
- Number of Words67108864 words
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Supply Current-Max1640 mA
- Number of Terminals200
- Number of Words Code64M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeDIMM200,24
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Nom (Vsup)2.5 V
- Clock Frequency-Max (fCLK)133 MHz
- Moisture Sensitivity Level1
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M470L6524BN0-CB0