M466F0804DT1-L60
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- DescriptionEDO DRAM Module, 8MX64, 60ns, CMOS
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeFAST PAGE WITH EDO
- JESD-30 CodeR-XDMA-N144
- Memory Width64
- Organization8MX64
- Package CodeDIMM
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density536870912 bit
- Memory IC TypeEDO DRAM MODULE
- Operating ModeASYNCHRONOUS
- Refresh Cycles4096
- Terminal Pitch0.8 mm
- Access Time-Max60 ns
- Number of Ports1
- Number of Words8388608 words
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Additional FeatureRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
- Supply Current-Max444 mA
- Number of Functions1
- Number of Terminals144
- Standby Current-Max0.0016 Amp
- Number of Words Code8M
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Output Characteristics3-STATE
- Package Equivalence CodeDIMM144,32
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)3 V
- Supply Voltage-Nom (Vsup)3.3 V
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M466F0804DT1-L60