M378B2873GB0-MA0
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- DescriptionDDR3 DRAM Module, 128MX64, 0.195ns, CMOS
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- Length133.35 mm
- TechnologyCMOS
- Access ModeSINGLE BANK PAGE BURST
- JESD-30 CodeR-XDMA-N240
- Memory Width64
- Organization128MX64
- Package CodeDIMM
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density8589934592 bit
- Memory IC TypeDDR3 DRAM MODULE
- Operating ModeSYNCHRONOUS
- Terminal Pitch1 mm
- Access Time-Max0.195 ns
- Number of Ports1
- Number of Words134217728 words
- Seated Height-Max30.15 mm
- Temperature GradeOTHER
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals240
- Number of Words Code128M
- Package Body MaterialUNSPECIFIED
- Operating Temperature-Max95 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.575 V
- Supply Voltage-Min (Vsup)1.425 V
- Supply Voltage-Nom (Vsup)1.5 V
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