M368L3223HUS-CB30 by Samsung Semiconductor, Inc. | Sourcengine

Samsung Semiconductor, Inc. M368L3223HUS-CB30

Lifecycle status
Discontinued
RoHS
RoHS compliant
Description
DDR DRAM Module, 32MX64, 0.7ns, CMOS, PDMA184
Category
Semiconductors Memory ICs DRAMs DDR DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDMA-N184
Memory Width
64
Organization
32MX64
Package Code
DIMM
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory Density
2147483648 bit
Memory IC Type
DDR DRAM MODULE
Refresh Cycles
8192
Terminal Pitch
1.27 mm
Access Time-Max
0.7 ns
Number of Words
33554432 words
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Supply Current-Max
2240 mA
Number of Terminals
184
Number of Words Code
32M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
DIMM184
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Nom (Vsup)
2.5 V
Clock Frequency-Max (fCLK)
166 MHz