M364E0803BF0-C600
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionEDO DRAM Module, 8MX64, 60ns, CMOS, PDMA168
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDMA-N168
- Memory Width64
- Organization8MX64
- Package CodeDIMM
- Package ShapeRECTANGULAR
- Package StyleMICROELECTRONIC ASSEMBLY Meter
- Surface MountNO
- Terminal FormNO LEAD
- Memory Density536870912 bit
- Memory IC TypeEDO DRAM MODULE
- Refresh Cycles4096
- Terminal Pitch1.27 mm
- Access Time-Max60 ns
- Number of Words8388608 words
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Supply Current-Max880 mA
- Number of Terminals168
- Standby Current-Max0.03 Amp
- Number of Words Code8M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeDIMM168
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Nom (Vsup)5 V
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M364E0803BF0-C600