M2F4G64CB8HB5N-CG by Nanya Technology Corporation | Sourcengine

Nanya Technology Corporation M2F4G64CB8HB5N-CG

Lifecycle status
Discontinued
RoHS
RoHS compliant
REACH
REACH compliant
Description
DDR3 DRAM Module, 512MX8, CMOS
Category
Semiconductors Memory ICs DRAMs DDR3 DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
4
Access Mode
MULTI BANK PAGE BURST
Length (mm)
133.35
JESD-30 Code
R-XDMA-N240
Memory Width
64
Package Code
DIMM
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
NO LEAD
Memory IC Type
DDR3 DRAM MODULE
Operating Mode
SYNCHRONOUS
Number of Ports
1
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH; WD-MAX
Memory Organization
512MX8
Number of Functions
1
Number of Terminals
240
Terminal Pitch (mm)
1
Number of Words Code
512M
Memory Density (bits)
34359738368
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Seated Height-Max (mm)
30.5
Supply Voltage-Max (V)
1.575
Supply Voltage-Min (V)
1.425
Supply Voltage-Nom (V)
1.5
Number of Words (words)
536870912
Sequential Burst Length
8
Standby Current-Max (A)
0.095
Supply Current-Max (mA)
3228
Interleaved Burst Length
8
Clock Frequency-Max (MHz)
667
Operating Temperature-Max (Cel)
95
Operating Temperature-Min (Cel)
0